| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having reduced parasitic resistance between a source electrode and a drain electrode and having improved on-characteristics, and to provide a semiconductor device having high reliability.SOLUTION: To a conductive oxide film including an oxide semiconductor to which an impurity element is added, the impurity element in a partial region of the oxide film is replaced with oxygen to form a high-resistance semiconductor region. A low-resistance region where the impurity element is not replaced with oxygen is used as a source region and a drain region, and the high-resistance semiconductor region where the impurity element is replaced with oxygen is used as a channel formation region.SELECTED DRAWING: Figure 2 |
