发明名称 PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a processing device in a long maintenance cycle and having a baffle plate, capable of suppressing the lowering of exhaust flow even under a process generating a much adhesion deposit. SOLUTION: Inside a processing chamber 102 of an etching system 100 a lower electrode 104 is set aside and devided into a processing space 122, where a wafer W on the lower electrode 104 is set and a evacuation path 124 is connected to an evacuating pipe 128 by a grounded baffle plate 120. A plurality of slits 120a arranged radially are formed on the baffle plate 120, and the slit 120a connects the processing space 122 and the evacuating path 124. The slit 120a on the side of the processing space 122 is tapered. A taper depth (h) of the taper face is substantially 1/2 of a slit depth (H) and a taper angle (θ) is substantially set to 5 deg. to 30 deg..
申请公布号 JPH11317397(A) 申请公布日期 1999.11.16
申请号 JP19980179616 申请日期 1998.06.11
申请人 TOKYO ELECTRON LTD 发明人 SUGIYAMA TOMOKAZU;OKAYAMA NOBUYUKI;SAEGUSA HIDEHITO;OZAWA JUN
分类号 H01L21/302;H01J37/32;H01L21/205;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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