Method of forming a capacitor of a semiconductor device

摘要

The present invention relates to a method of forming a capacitor of a semiconductor device, which specially treats the surface of a charge storage electrode of the lower in order to improve the poor stepcoverage of the Ta2O5 film deposited by the PECVD method in the capacitor using the Ta2O5 film having a specific dielectric constant as the dielectric film, prevents the leakage current from generating according to improving the electrical characteristic of the capacitor by depositing the Ta2O5 film by use of the LPCVD method where the stepcoverage is excellent, and improves the characteristic of the semiconductor device and the trust according to the result.