| 摘要 |
A self-aligned type semiconductor laser device which is capable of lasing operation at high optical output levels, rarely develops COMD, and maintains high reliability for a long term. The SAS type semiconductor laser device has an active layer, and a low refractive-index layer formed close the active layer and functioning also as a current blocking layer. The low refractive-index layer includes a plurality of compound semiconductor layers made of AlxGa1-xAs (0<=x<=1), and the compound semiconductor layers have refractive indices thereof set such that the refractive index decreases with increasing distance from the active layer. Specifically, the low refractive-index layer includes a plurality of AlGaAs layers, and the AlGaAs layers have contents of Al thereof set such that the content of Al increases with increasing distance from the active layer.
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