发明名称 APPARATUS FOR PULLING SILICON SINGLE CRYSTAL, GRAPHITE MEMBER USED THEREFOR AND METHOD FOR PREVENTING DEGRADATION OF GRAPHITE MEMBER
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent the degradation of a graphite member by changing the shape of corner part of a graphite member. <P>SOLUTION: The graphite member is for composing an apparatus for pulling a semiconductor single crystal and its corner part is rounded to have a specified curvature (or radius of curvature). For example, the corner parts of both sides of upper edges 7a of a graphite heater 7 are rounded. When the width of the graphite heater 7 is t, the radius of curvature r is preferable to be in a range from t/8 to t/4. By this processing, exfoliation/damage of the edges of a graphite heater 7 is prevented and degradation of a graphite material is prevented. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008087997(A) 申请公布日期 2008.04.17
申请号 JP20060268028 申请日期 2006.09.29
申请人 SUMCO TECHXIV CORP 发明人 KAWAZOE SHINICHI;OGAWA FUKUO;NARUSHIMA YASUTO;TOMONAGA TSUNENARI;KUBOTA TOSHIMICHI
分类号 C30B29/06;C30B15/14 主分类号 C30B29/06
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