METHOD AND DEVICE FOR FORMING SPUTTERED FILM

摘要

PROBLEM TO BE SOLVED: To easily form an alloy layer including an additive metal having a concentration gradient in a thickness direction by sputtering in one processing chamber.

SOLUTION: The method for forming a sputtered film comprises a first film forming step of forming a first alloy film on an object to be processed by a metal target particle sputtered by a plasma generated by supplying a gas for generating the plasma into the processing chamber having a metal target comprising an alloy including the additive metal and a main metal, and supplying an electric power to the gas; and a second film forming step of depositing a second alloy film having a concentration of the additive metal diffrent from that of the first alloy film on the first alloy film by a sputtered particle of the metal target by differenciating at least one of a pressure and an electric power in the processing chamber to generate the plasma. This can form the film with its concentration of the additive metal different from that of the main metal in the thickness direction.

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