发明名称 SENSE AMPLIFIER FOR LOW-SUPPLY-VOLTAGE NONVOLATILE MEMORY CELLS
摘要 A sense amplifier for nonvolatile memory cells includes a reference cell, a first load, connected to the reference cell, and a second load, connectable to a nonvolatile memory cell, both the first load and the second load having controllable resistance; a control circuit of the first load and of the second load supplies the first load and the second load with a control voltage irrespective of an operating voltage between a first conduction terminal and a second conduction terminal of the first load.
申请公布号 US2009154249(A1) 申请公布日期 2009.06.18
申请号 US20090368271 申请日期 2009.02.09
申请人 PASOTTI MARCO;DE SANDRE GUIDO;IEZZI DAVID;POLES MARCO 发明人 PASOTTI MARCO;DE SANDRE GUIDO;IEZZI DAVID;POLES MARCO
分类号 G11C16/06;G11C7/00;G11C7/06;G11C7/14;G11C16/28 主分类号 G11C16/06
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