FET BIOSENSOR

摘要

The disclosed technology relates generally to semiconductor devices, and more particularly to semiconductor devices such as field-effect transistor devices configured for biomolecule sensing. In one aspect, a semiconductor chip comprises at least one field-effect transistor device which comprises a source, a drain, a gate stack and a channel region formed between the source and the drain. The gate stack only partially overlaps the channel region at the source side and/or at the drain side, such that a non-overlapped channel region at the source side and/or at the drain side is formed, where the non-overlapped channel region is configured for sensing biomolecules.

主权项

1. A method of fabricating a semiconductor chip configured for bio-sensing, the method comprising:
obtaining a substrate comprising at least one semiconductor layer; providing a gate stack on the substrate; providing a doped drain region in and/or on the substrate; and providing a doped source region in and/or on the substrate, wherein the doped drain region and/or the doped source region have an underlap region laterally between the gate stack and the source region and/or between the gate stack and the drain region, such that the underlap region is configured for sensing biomolecules attached thereto.