| 发明名称 |
SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, ELECTRONIC APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce a shock on an element arranged below a terminal electrode. <P>SOLUTION: A stress buffer layer 12 disposed below an electrode pad 14 is formed on an interlayer insulating layer 11 by using a part of a wiring layer formed on the interlayer insulating layer 11. The electrode pad 14 installed on a gate electrode 3 is formed on the interlayer insulating layer 13. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
| 申请公布号 |
JP2005050963(A) |
申请公布日期 |
2005.02.24 |
| 申请号 |
JP20030204872 |
申请日期 |
2003.07.31 |
| 申请人 |
SEIKO EPSON CORP |
发明人 |
SATO YUTAKA |
| 分类号 |
H01L23/52;H01L21/3205;H01L21/60;(IPC1-7):H01L21/320 |
主分类号 |
H01L23/52 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
