EXPOSURE MASK, OPTICAL PROXIMITY CORRECTION APPARATUS, OPTICAL PROXIMITY CORRECTION METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND OPTICAL PROXIMITY CORRECTION PROGRAM

摘要

PROBLEM TO BE SOLVED: To increase the efficiency of optical proximity correction while suppressing deterioration in the accuracy of optical proximity correction.

SOLUTION: A mask pattern specified by design pattern data is divided into limited regions A to C. An OPC added pattern for the limited region A is produced by adopting the correction result registered in a reference data base RB, while an OPC added pattern for the limited region B is produced by adopting rule-base OPC in the limited region B. The OPC added patterns of the limited regions A, B and the original mask pattern in the limited region C are compounded.

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