| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a backside incident photodetector which is capable of reducing a package in size and restraining light to detect from scattering. <P>SOLUTION: The backside incident photodiode 1 is equipped with an n-type semiconductor substrate 10, a p<SP>+</SP>-type impurity semiconductor region 11, a recess 12, a coating layer 13, and an aperture plate 14. The p<SP>+</SP>-type impurity semiconductor region 11 is formed on the top surface S1 of the n-type semiconductor substrate 10. The recess 12 where light to detect is incident is formed in the region of the rear S2 of the n-type semiconductor substrate 10 facing the p<SP>+</SP>-type impurity semiconductor region 11. The coating layer 13 whose front surface is substantially flat is formed on the rear surface S2 of the n-type semiconductor substrate 10. Furthermore, the aperture plate 14 is provided on the coating layer 13. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
