SILICON CARBIDE PRODUCT, ITS MANUFACTURING METHOD, AND CLEANING METHOD FOR SILICON CARBIDE PRODUCT

摘要

PROBLEM TO BE SOLVED: To improve the characteristics of silicon carbide by investigating the cause of such a problem that a semiconductor device or the like using silicon carbide sometimes can not provide characteristic expected from a theoretical value. SOLUTION: It is possible to substantially prevent deterioration in characteristics by controlling the concentration of surface metal impurities to be≤1×1011(atom/cm2) because the dispersion in these characteristics is caused by high concentration of the metal impurities on the surface of the silicon carbide. The silicon carbide having such a highly clean surface can be obtained by cleaning the surface with an aqueous solution containing hydrofluoric acid, hydrochloric acid or sulfuric acid and hydrogen peroxide solution. COPYRIGHT: (C)2005,JPO&NCIPI