发明名称 Current-holding circuit for memory cells, has inverting amplifier that generates sensor signal representing current, received by first holding node from memory cell, in response to received reference voltage
摘要 <p>The circuit has a sensor having first and second ports which also serve as first and second holding nodes. The first port is connected to a memory cell. The circuit also has an inverting amplifier which has inverting input to which first holding node is connected, reference input for receiving reference voltage, and output to which second holding node is connected. The inverting amplifier generates a sensor signal in response to received reference voltage, and outputs the sensor signal to second holding node. The sensor signal represents current received by first holding node from memory cell. Independent claims are included for the following: (1) Current holding method; and (2) Computer program product storing the computer program of the current holding process.</p>
申请公布号 DE102005018574(A1) 申请公布日期 2006.10.05
申请号 DE20051018574 申请日期 2005.04.21
申请人 INFINEON TECHNOLOGIES FLASH GMBH & CO. KG 发明人 SROWIK, RICO;GOETZ, MARCO;CURATOLO, GIACOMO
分类号 G11C16/26 主分类号 G11C16/26
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