摘要 |
<p>Disclosed is a light-emitting device comprising a first electrode, a second electrode arranged opposite to the first electrode, and a light-emitting layer interposed between the first electrode and the second electrode, in which light-emitting layer n-type semiconductor particles are dispersed in a p-type semiconductor medium. Also disclosed is another light-emitting device comprising a first electrode, a second electrode arranged opposite to the first electrode, and a light-emitting layer interposed between the first electrode and the second electrode, in which light-emitting layer a p-type semiconductor is segregated among n-type semiconductor particles.</p> |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;SATOH, EIICHI;NASU, SHOGO;TANIGUCHI, REIKO;AOYAMA, TOSHIYUKI;ONO, MASAYUKI;HASEGAWA, KENJI;ODAGIRI, MASARU |
发明人 |
SATOH, EIICHI;NASU, SHOGO;TANIGUCHI, REIKO;AOYAMA, TOSHIYUKI;ONO, MASAYUKI;HASEGAWA, KENJI;ODAGIRI, MASARU |