| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-voltage transistor having a thin-film SOI. SOLUTION: In a manufacturing method for the SOI high-voltage transistor 200, a control channel region 208 and an auxiliary channel region 210 adjacent to the control channel region 208 are formed in an Si upper layer 206 of an SOI substrate 201, and a control gate 220 is formed on the control channel region 208 and an auxiliary gate 222 on the auxiliary channel region 210. A source region 212 is formed while being adjoined to the control channel region 208, an LDD region 216 is inserted between the auxiliary channel region 210 and a drain region 218 and an internal drain region 214 is inserted between the control channel region 208 and the auxiliary channel region 210. The Si upper layer 206 is thinned within a range of a layer thickness of 5 to 200 nm, and protruded source region 212, drain region 218, LDD region 216 and internal drain region 214 are formed. COPYRIGHT: (C)2009,JPO&INPIT
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