| 摘要 |
PURPOSE: A program method of nonvolatile memory device and an eliminating method thereof for varying eliminating voltage according to ambient temperature are provided to control program speed and eliminating speed suitable for temperature change. CONSTITUTION: A program method of nonvolatile memory device and an eliminating method thereof for varying eliminating voltage according to temperature are as follows. The ambient temperature is sensed(420). A program starting voltage of an ISPP(Incremental step pulse program) is set up according to the range of the sensed external temperature(430). According to the program starting voltage set up, the program operation is performed(440). |
