| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor whose life time as a whole element can be elongated by enhancing insulation resistance of basic transistors in a chip circumferential part.SOLUTION: A channel layer, a carrier supply layer, source electrode (4), drain electrode (2), and gate electrode (3) form a plurality of basic transistors. Basic transistors in an outer most peripheral area surrounded by a dotted line 6 among the plurality of basic transistors have higher insulation resistance than the other basic transistors.SELECTED DRAWING: Figure 1 |
