INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

An integrated circuit device comprises first and second fin-type active regions having different conductive type channel regions wherein a first device isolation layer covers both sidewalls of the first fin-type active region, and a second device isolation layer covers both sidewalls of the second fin-type active region. The first device isolation layer and the second device isolation layer have different stack structures. To manufacture the integrated circuit device, the first device isolation layer covering both sidewalls of the first fin-type active region and the second device isolation layer covering both sidewalk of the second fin-type active region are formed after the first fin-type active region and the second fin-type active region are formed. The first device isolation layer and the second device isolation layer are formed to have different stack structures.