发明名称 OXIDE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide an oxide with high crystallinity or an oxide having a crystal structure with few defects.SOLUTION: A method for manufacturing an oxide with a sputtering apparatus includes a target, a backing plate, a magnet unit, a power source, and a substrate holder. The target is fixed to the backing plate. The magnet unit is disposed on a back surface side of the target with the backing plate positioned therebetween. The power source is electrically connected to the backing plate. The substrate holder faces the target. In the method, the substrate holder is provided with a substrate, the power source is used to generate plasma including a cation in a space between the target and the substrate, the plasma is confined in the magnetic field of the magnet unit, a level of plasma density is controlled in a region in contact with the substrate, sputtered particles are generated by making the cation collide with the target, and the sputtered particles are deposited on the substrate.SELECTED DRAWING: Figure 1
申请公布号 JP2016180178(A) 申请公布日期 2016.10.13
申请号 JP20160049277 申请日期 2016.03.14
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 C23C14/34;C23C14/35;H01L21/363;H01L21/8234;H01L21/8238;H01L27/06;H01L27/08;H01L27/088;H01L27/092 主分类号 C23C14/34
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