发明名称 |
SILICON DIOXIDE ETCH PROCESS WHICH PROTECTS METALS |
摘要 |
The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a buffered oxide etch, and optionally a surfactant.
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申请公布号 |
US2001038090(A1) |
申请公布日期 |
2001.11.08 |
申请号 |
US19980149474 |
申请日期 |
1998.09.08 |
申请人 |
RASMUSSEN ROBERT T.;CHADHA SURJIT S.;CATHEY DAVID A. |
发明人 |
RASMUSSEN ROBERT T.;CHADHA SURJIT S.;CATHEY DAVID A. |
分类号 |
H01L21/311;H01L21/3213;(IPC1-7):C09K13/08 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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