| 摘要 |
A system and method for the selective etching or removal of encapsulating material from an encapsulated object, such as a semiconductor, includes depositing an encapsulant-removal agent, such as a solvent or acid, onto the surface of the object. A flow of heated gas, such as an inert gas, is directed onto the deposited agent to effect the heating thereof and promote the removal of the encapsulating material. In general, the flow of heated gas is sufficient to cause the formation of a depression or depression-like concavity in the surface of the removing agent to promote the removal process. In a preferred embodiment, a pipe is provided with an internal heater to heat the gas flow there through and a nozzle at one end to direct the gas flow toward and onto the deposited removal agent. |
