ABRASIVE

摘要

In order to polish the surface of an SiO 2 insulating film at high speed without any scratch, an abrasive containing a slurry prepared by dispersing in a medium either cerium oxide particles constituted by two or more crystallites and having grain boundaries or a bulk density of more than 6.5 g/cm 3 or abrasive grains having pores. A method of polishing a wafer using the abrasive and a method of producing a semiconductor device are also disclosed.