发明名称 INORGANIC POLYSILAZANE RESIN
摘要 PROBLEM TO BE SOLVED: To provide an inorganic polysilazane resin allowing reduction in problems such as shrinkage and residual stress of a film after siliceous film conversion while keeping various properties such as insulation properties, film surface smoothness, resistance against acid/alkali and solvents and high barrier property, and allowing formation of a siliceous film with high-density; a method for formation a siliceous film using this; and a siliceous film formed by this method.SOLUTION: The inorganic polysilazane resin of the present invention is an inorganic polysilazane resin comprising a silicon atom and a nitrogen atom and having a ratio Si/N of the silicon atom to the nitrogen atom of 1.30 or more. Such an inorganic polysilazane resin having a high Si content can be manufactured by, for example, a method where an inorganic polysilazane compound comprising both Si-NH and Si-Cl is heated to react NH and Cl; a method where a silazane oligomer (polymer) with no Si-Cl bond is synthesized, followed by adding dihalosilane thereto for heat reaction; or the like. The siliceous film is formed, for example, by coating a substrate with a coating composition containing the above inorganic polysilazane resin, drying and then oxidation, in the heated state, by contact with water vapor or with hydrogen peroxide vapor and water vapor.
申请公布号 JP2013162072(A) 申请公布日期 2013.08.19
申请号 JP20120025066 申请日期 2012.02.08
申请人 AZ ELECTRONIC MATERIALS MFG CO LTD 发明人 FUJIWARA TAKASHI;RALF GROTTENMULLER;KANDA TAKASHI;NAGAHARA TATSURO
分类号 H01L21/316;C01B21/068 主分类号 H01L21/316
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