发明名称 |
VORRICHTUNGEN ZUM ABTRENNEN VON SUBSTRATEN UND ZUGEHÖRIGE VERFAHREN |
摘要 |
<p>The invention relates to a method of splitting apart a substrate of two adjoining wafers defining between them a cleavage plane, by bringing each substrate into a substrate-receiving space; and clamping first and second jaw portions onto each substrate in such a manner as to hold each substrate and urge apart the two wafers of each substrate by co-operation between the shapes of housings in first and second portions of the two jaws, respectively. The invention also relates to a splitting method that includes bringing each substrate into a substrate-reception space; clamping together separator portions onto each substrate so as to split apart the two wafers of each substrate; and clamping the split-apart substrate wafers so as to hold the wafers together. An automated system for processing multiple substrates is also provided.</p> |
申请公布号 |
DE60219034(D1) |
申请公布日期 |
2007.05.03 |
申请号 |
DE2002619034 |
申请日期 |
2002.07.24 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
BARGE, THIERRY;SCHWARZENBACH, WALTER;WAECHTER, JEAN-MARC;TRUONG,THUAN;GHYSELEN, BRUNO |
分类号 |
B28D1/32;H01L21/683;B28D5/00;H01L21/00;H01L21/677 |
主分类号 |
B28D1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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