发明名称 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it
摘要 There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R<SUP>1</SUP>, R<SUP>2</SUP>, R<SUP>3 </SUP>and R<SUP>5 </SUP>are each a hydrogen atom or a methyl group; R<SUP>4 </SUP>is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R<SUP>6 </SUP>is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0<x<=1, 0<=y<1 and 0<=z<1; and a weight-average molecular weight of the polymer is in the range of 2000 to 200000, and a resin having a (meth)acrylate unit of an alicyclic lactone structure represented by the formula (3): wherein R<SUP>8 </SUP>is a hydrogen atom or a methyl group, and R<SUP>9 </SUP>is a hydrocarbon group of 7 to 16 carbon atoms having an alicyclic lactone structure.
申请公布号 US2007218403(A1) 申请公布日期 2007.09.20
申请号 US20070713791 申请日期 2007.03.05
申请人 NEC CORPORATION 发明人 MAEDA KATSUMI;IWASA SHIGEYUKI;NAKANO KAICHIRO;HASEGAWA ETSUO
分类号 G03C1/73;C07D307/93;C08F20/28;C08F118/02;C08F120/28;G03F7/004;G03F7/038;G03F7/039 主分类号 G03C1/73
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