| 摘要 |
A fluorine-containing silicon compound and a silicone resin comprising the same as a recurring unit are provided to form a fine pattern by securing an appropriate acidity to minimize the pattern collapse caused by swelling, show improved resistance to the etching used in the pattern transfer to an underlying organic film and be able to achieve the appropriate acidity by a necessary sufficient number of fluorine substitution. A fluorinated silicone resin comprises recurring units having the formula (1a) or (2a), wherein at least one of X^1a, X^2a, and X^3a is O and the remains are H, hydroxyl, halogen, a C1-6 straight, branched or cyclic alkoxy, or a monovalent organic group having a C1-20 straight, branched, cyclic or polycyclic skeleton, Y is a divalent organic group, each R^1 and R^2 is independently H or a monovalent organic group having a C1-20 straight, branched, cyclic or polycyclic skeleton, or R^1 and R^2 is able to bond together to form a ring with the carbon atom to which they are attached, each W^1 and W^2 is independently methylene or O, R^6 is H, methyl, F or trifluoromethyl, p is 0 or 1, and q is 0 or 1. The resist composition comprises the silicone resin, a photoacid generator, and an organic solvent. The patterning method comprises the steps of: (a) applying the resist composition onto a substrate to form a resist layer; (b) heat-treating the resist layer and exposing it to high energy radiation having a wavelength of up to 300 nm or electron beam through a photomask; and (c) optionally heat-treating the exposed resist layer, and developing it with a developer. |
