| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon carbide sintered compact the variance of whose volumetric resistance is narrowed and which has stabilized electric conductivity and to provide a method for manufacturing the silicon carbide sintered compact. <P>SOLUTION: The silicon carbide sintered compact is manufactured by sintering mixed powder containing silicon carbide powder and a nonmetallic sintering aid under conditions of high temperature and high pressure. The silicon carbide powder to be used contains a silicon source, a carbon source from which carbon is generated when heated, a nitrogen source-containing compound and a polymerization or cross-linkage catalyst. The method for manufacturing the silicon carbide sintered compact comprises the steps of: hardening/drying a mixture containing 100 parts weight carbon source and 1.5-6 parts weight nitrogen source-containing compound to obtain a solid; heating/carbonizing the obtained solid in a non-oxidizing atmosphere to obtain calcined powder; and further firing the obtained calcined powder in the non-oxidizing atmosphere to obtain the silicon carbide powder to be used. <P>COPYRIGHT: (C)2008,JPO&INPIT |
