| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a fin transistor and a method for manufacturing a saddle-type fin transistor capable of preventing the upper portion of a fin from being lost in a formation step of a recess of a field oxide film. SOLUTION: The method for manufacturing a fin transistor includes a step for forming pad layers 22, 23 on a semiconductor substrate 21 using an element isolation mask 26, a step for etching the semiconductor substrate with the element isolation mask and the pad layers as the barriers to form a trench 24, a step for forming an isolated structure by embedding an insulator 25 in the trench, a step for etching the isolated structure using a gas of high selection ratio of the insulator to the pad layers to form the fin structure 27B, a step for forming a gate insulating film on the fin structure, and a step for forming a conductive layer on the gate insulating film. COPYRIGHT: (C)2008,JPO&INPIT
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