| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deterioration of reliability in a semiconductor having a trench-gate-structured MISFET. SOLUTION: A method for manufacturing a semiconductor device is provided with a trench-gate-structured MISFET. After forming a groove 4 from a principal plane of a first conductivity-type semiconductor layer 1B that is the drain region toward its depth direction, forming a gate insulating film 5 constituted of a thermal oxidation film 5A and deposition film 5B inside the groove 4, and forming a gate electrode 6A in the groove 4, a second conductivity-type semiconductor region 8 that is a channel-forming region is formed, by introducing impurities into the first conductivity-type semiconductor layer 1B, and a first conductivity-type semiconductor region 9 is formed, by introducing impurities into the second conductivity-type semiconductor region 8. COPYRIGHT: (C)2009,JPO&INPIT
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