| 摘要 |
<p>PURPOSE: A semiconductor element structure is provided to generate high voltage by forming a groove between a first semiconductor device and a second semiconductor device. CONSTITUTION: A first semiconductor device (2a) has at least two electrodes. A second semiconductor device (2b) has at least two electrodes. An encapsulating material (4) covers the first semiconductor device and the second semiconductor device. A groove (4f) is formed between the first semiconductor device and the second semiconductor device. The groove has a slit shape.</p> |
