| 发明名称 |
MEMORY DEVICE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING MEMORY DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
| 摘要 |
A memory device includes a reset gate whose resistance changes. The memory device also includes a pillar-shaped phase-change layer, a reset gate insulating film surrounding the pillar-shaped phase-change layer, and the reset gate surrounding the reset gate insulating film. The pillar-shaped phase-change layer and the reset gate are electrically insulated from each other by the reset gate insulating film. |
| 申请公布号 |
US2016163976(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201615019553 |
申请日期 |
2016.02.09 |
| 申请人 |
Unisantis Electronics Singapore Pte. Ltd. |
发明人 |
MASUOKA Fujio;NAKAMURA Hiroki |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device comprising:
a pillar-shaped phase-change layer; a reset gate insulating film surrounding the pillar-shaped phase-change layer; and a reset gate surrounding the reset gate insulating film, wherein the pillar-shaped phase-change layer and the reset gate are electrically insulated from each other by the reset gate insulating film. |
| 地址 |
Peninsula Plaza SG |
