Method of forming an integrated multichannel device and single channel device structure

摘要

An integrated circuit is disclosed that includes a single channel device having a first portion of a single shared heterostructure overlying a substrate structure in a single channel device area, and a gate contact that is in contact with the first portion of the single shared heterostructure. The integrated circuit also includes a multichannel device comprising a second portion of the single shared heterostructure overlying the substrate structure in a multichannel device area, a barrier layer overlying the second portion of the single shared heterostructure, and a superlattice structure overlying the barrier layer, the superlattice structure comprising a plurality of heterostructures. An isolation region in the single shared heterostructure electrical isolates the single channel device from the multichannel device.

主权项

1. A method of forming an integrated multichannel device and single channel device structure, the method comprising:
depositing a single shared heterostructure over a substrate structure; depositing a barrier layer over the single shared heterorstructure; forming a superlattice structure comprising a plurality of heterostructures over the barrier layer; etching away a portion of superlattice structure over a single channel area to the barrier layer; etching away a portion of the barrier layer over the single channel area to expose a top surface of the single shared heterostructure over the single channel area; forming an isolation region on the single shared heterostructure to isolate the single channel area from a multichannel area to provide a single channel device electrically isolated from a multichannel device; and performing a gate contact fill process to form a first gate contact for the single channel device and a second gate contact for the multichannel device.