SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE

摘要

A semiconductor device with a novel structure. An upper-bit grayscale voltage and a lower-bit grayscale voltage are separately produced, and then the grayscale voltages are converted into currents and the currents are synthesized. The obtained current is converted into a voltage, and thus an intended grayscale voltage is obtained. The upper-bit grayscale voltage and the lower-bit grayscale voltage are generated using respective D/A converter circuits each including a resistor string circuit and a pass transistor logic. The increase in the number of transistors supplied with high voltage, which occurs along with the increase in the number of digital signal bits, is prevented. Thus, the increase in parasitic capacitance can be suppressed, and a smaller circuit area and higher response speed are obtained.

主权项

1. A semiconductor device comprising:
a first digital-to-analog converter circuit; a second digital-to-analog converter circuit; an interpolation circuit; and a voltage-current converter circuit, wherein the first digital-to-analog converter circuit is configured to convert an upper (N-M)-bit digital signal among an N-bit digital signal into a first voltage, where N is a natural number of 2 or more and M is a natural number less than N, wherein the second digital-to-analog converter circuit is configured to convert a lower M-bit digital signal into a second voltage, wherein the interpolation circuit is configured to generate a first current on the basis of the first voltage, wherein the voltage-current converter circuit is configured to convert the second voltage into a second current, and wherein the interpolation circuit is configured to convert a current obtained by synthesis of the first current and the second current, into a voltage.