发明名称 SEMICONDUCTOR SWITCHING ELEMENT DRIVER CIRCUIT
摘要 A driver circuit 101 is connected to a control terminal of a semiconductor switching element 1. The driver circuit 101 includes an input circuit 3 connected to an input terminal 50, and an output control circuit 4 connected to the input circuit 3. A pulse signal output from the output control circuit 4 is input to a dead time adjustment circuit 13. The dead time adjustment circuit 13 includes a delay circuit which can delay the rising edge and the falling edge of the pulse signal output from the output control circuit 4 on the basis of signals from temperature analog output circuits 11 and 12. An output from the dead time adjustment circuit 13 is input to the drive circuit 5. The drive circuit 5 outputs a drive signal to an output terminal 51 of the driver circuit 101.
申请公布号 US2016241227(A1) 申请公布日期 2016.08.18
申请号 US201315026748 申请日期 2013.11.14
申请人 Mitsubishi Electric Corporation 发明人 HIRATA Daisuke
分类号 H03K17/0812;H01L29/739;H01L29/16 主分类号 H03K17/0812
代理机构 代理人
主权项 1. A semiconductor switching element driver circuit comprising: an input terminal to which an input signal is input; an output terminal connected to a control terminal of a semiconductor switching element; a signal circuit section which supplies to the output terminal a drive signal having an on edge turned on in response to a rising edge of the input signal, and an off edge turned off in response to a falling edge of the input signal; and temperature detector including both first temperature detector which outputs a first temperature detection signal having correlation with the temperature of the signal circuit section, and second temperature detector which receives a second temperature detection signal from an element temperature sensor element which senses the temperature of the semiconductor switching element, wherein at least one of the on edge and the off edge is delayed on the basis of both the first temperature detection signal and the second temperature detection signal so that the difference between an on transmission delay time which is a delay time between the rising edge and the on edge and an off transmission delay time which is a delay time between the falling edge and the off edge is reduced.
地址 Tokyo JP