| 摘要 |
The present invention relates to a thin film transistor substrate where different kinds of thin film transistors are placed on an identical substrate and a display device using the same. According to the disclosed specification, the thin film transistor substrate comprises: a substrate; a first thin film transistor; and a second thin film transistor. The first thin film transistor is placed on the substrate, while including a polycrystalline semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode. Meanwhile, the second thin film transistor is arranged on the substrate, while including an oxide semiconductor layer, a second gate electrode, and a second source electrode, and a second drain electrode. The first gate electrode is overlapped with the polycrystalline semiconductor layer with a gate insulation film set between the two. On the upper part of the first gate electrode, a middle insulation film including a nitride layer is arranged. The second gate electrode is arranged on the middle insulation film which covers the first gate electrode. Meanwhile, on the middle insulation film, an oxide film which covers the second gate electrode is arranged. The oxide semiconductor layer is overlapped with the second gate electrode on the oxide film. The first source electrode and first drain electrode are arranged between the middle insulation film and oxide film, while the second source electrode and second drain electrode are arranged on the oxide semiconductor layer. The objective of the present invention is to provide the thin film transistor substrate equipped with two or more kinds of thin film transistors on an identical substrate and the display device using the same. |
