| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
A semiconductor memory device includes a first well of a first conductivity type, a memory cell array including a plurality of memory cells stacked above the first well, the memory cells including a first memory cell transistor, a first wiring above the memory cells array and electrically connected to the first memory cell transistor, and a controller configured to execute an erase operation in which an erase voltage is applied to the first wiring while the first well is in an electrically floating state. |
| 申请公布号 |
US2016260487(A1) |
申请公布日期 |
2016.09.08 |
| 申请号 |
US201615055250 |
申请日期 |
2016.02.26 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MAEJIMA Hiroshi |
| 分类号 |
G11C16/14;G11C16/26;H01L27/115 |
主分类号 |
G11C16/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device, comprising:
a first well of a first conductivity type; a memory cell array including a plurality of memory cells stacked above the first well, the memory cells including a first memory cell transistor; a first wiring above the memory cells array and electrically connected to the first memory cell transistor; and a controller configured to execute an erase operation in which an erase voltage is applied to the first wiring while the first well is in an electrically floating state. |
| 地址 |
Tokyo JP |
