| 发明名称 | Switching device structures and methods | ||
| 摘要 | Switching device structures and methods are described herein. A switching device can include a vertical stack comprising a material formed between a first and a second electrode. The switching device can further include a third electrode coupled to the vertical stack and configured to receive a voltage applied thereto to control a formation state of a conductive pathway in the material between the first and the second electrode, wherein the formation state of the conductive pathway is switchable between an on state and an off state. | ||
| 申请公布号 | US9478740(B2) | 申请公布日期 | 2016.10.25 |
| 申请号 | US201514792778 | 申请日期 | 2015.07.07 |
| 申请人 | Micron Technology, Inc. | 发明人 | Sandhu Gurtej S. |
| 分类号 | G11C13/00;H01L45/00 | 主分类号 | G11C13/00 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. A nanoionic switching device, comprising: a vertical stack comprising a material formed between a first and a second electrode; and a third electrode formed between the first and the second electrode, formed inside of the material, coupled to the vertical stack, and configured to receive a voltage applied thereto to control a formation state of a conductive pathway in the material between the first and the second electrode; wherein the formation state of the conductive pathway is switchable between an on state and an off state. | ||
| 地址 | Boise ID US | ||