| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation method of a GaO-based crystal film capable of forming a GaO-based crystal film excellent in crystal quality, and to provide a crystal laminate structure having the GaO-based crystal film.SOLUTION: There is provided a formation method of a GaO-based crystal film for epitaxially growing a GaO-based crystal film 12 on a GaO-based substrate 10. In the formation method of the GaO-based crystal film in one embodiment, a growth temperature of the GaO-based crystal film 12 is 560°C or higher, and the VI/III ratio in an atmosphere near a growth surface when the GaO-based crystal film 12 is grown is smaller than 1/2 or larger than 2.SELECTED DRAWING: Figure 3 |
