发明名称 |
Ferroelectric transistor, use thereof in a memory cell confuguration and method of producing the ferroelectric transistor |
摘要 |
A ferroelectric transistor suitable as a memory element has a first gate intermediate layer and a first gate electrode disposed on the surface of a semiconductor substrate and disposed between source/drain regions. The first gate intermediate layer contains at least one ferroelectric layer. In addition to the first gate intermediate layer, a second gate intermediate layer and a second gate electrode are configured between the source/drain regions. The second gate intermediate layer contains a dielectric layer. The first gate electrode and the second gate electrode are connected to each other via a diode structure.
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申请公布号 |
US2001038117(A1) |
申请公布日期 |
2001.11.08 |
申请号 |
US20010801209 |
申请日期 |
2001.03.07 |
申请人 |
HANEDER THOMAS PETER;REISINGER HANS;STENGL REINHARD;BACHHOFER HARALD;WENDT HERMANN;HOENLEIN WOLFGANG |
发明人 |
HANEDER THOMAS PETER;REISINGER HANS;STENGL REINHARD;BACHHOFER HARALD;WENDT HERMANN;HOENLEIN WOLFGANG |
分类号 |
H01L21/8247;G11C11/22;H01L21/8246;H01L27/105;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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