| 摘要 |
<p>Resist composition for forming resist film on a substrate is provided to be used to form resist pattern with fineness and high sharpness while inhibiting generation of nano-edge surface roughness, and be suitable in manufacturing semiconductor device by adding tannin and/or tannin derivatives to the composition. The resist composition includes any one selected from tannin and tannin derivatives and polymer component. Mass ratio of the polymer component is less than 1/100 relative to solid content of the resist composition. Mass ratio of the tannin or tannin derivative is the greatest among all of components contained in the composition. The tannin or tannin derivative has hydroxy groups of which a part of the groups is substituted by protective groups, and the protective groups are a selected from alkyl group and phenyl group. The resist composition further contains cross-linkage agent which is at least one selected from a group consisting of melamine derivative, urea derivative, uryl derivative and pyrogallol derivative.</p> |
