发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 <p>A method for fabricating a semiconductor device is provided to reduce a manufacturing cost by pattering a lower structure without using a high-priced exposure system. A pattern layer forming process is performed to form a pattern layer on an entire surface of a substrate. A first patterning process is performed by using a first mask of a line type. The first mask has a width corresponding to a width of the active region. A second patterning process is performed by using a second mask of a line type. The pattern layer is patterned by using the second mask having the width corresponding to the length of the active region.</p>
申请公布号 KR20060130936(A) 申请公布日期 2006.12.20
申请号 KR20050049290 申请日期 2005.06.09
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KONG, KEUN KYU;SON, MIN SEOK
分类号 H01L21/027 主分类号 H01L21/027
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