发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
<p>A method for fabricating a semiconductor device is provided to reduce a manufacturing cost by pattering a lower structure without using a high-priced exposure system. A pattern layer forming process is performed to form a pattern layer on an entire surface of a substrate. A first patterning process is performed by using a first mask of a line type. The first mask has a width corresponding to a width of the active region. A second patterning process is performed by using a second mask of a line type. The pattern layer is patterned by using the second mask having the width corresponding to the length of the active region.</p> |
申请公布号 |
KR20060130936(A) |
申请公布日期 |
2006.12.20 |
申请号 |
KR20050049290 |
申请日期 |
2005.06.09 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KONG, KEUN KYU;SON, MIN SEOK |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|