MANUFACTURING PROCESS OF LIGHT EMITTING DIODE USING ALUMINIUM BUFFER LAYER

摘要

A method for manufacturing an LED is provided to improve characteristics of epitaxial layer by using a GaN substrate grown on an Al buffer layer. An Al buffer layer(11) and an N-GaN layer are formed on a substrate(10). A wafer is acquired by forming a P-GaN layer, a P-ohmic contact layer and a UBM(Under Bump Metalization) layer on the N-GaN layer. The UBM layer is bonded onto a sub-mount. The substrate is lifted off the resultant structure by performing a wet etching process on the Al buffer layer. An N-ohmic contact layer is formed on the N-GaN layer.