SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and a light-emitting apparatus with high efficiency.SOLUTION: A semiconductor light-emitting element 110 comprises: an n-type semiconductor layer 10; a p-type semiconductor layer 20; a light-emitting layer 30; a p-side electrode 40; and an n-side electrode 50. The n-type semiconductor layer 10 includes a nitride semiconductor. The p-type semiconductor layer 20 includes a nitride semiconductor layer. The light-emitting layer 30 is provided between the n-type semiconductor layer 10 and the p-type semiconductor layer 20. The p-side electrode 40 contacts a part of the p-type semiconductor layer 20 on a first main surface on a side opposite to the light-emitting layer 30 of the p-type semiconductor layer 20. The n-side electrode 50 contacts a part of the n-type semiconductor layer 50 on a second main surface on a side opposite to the light-emitting layer 30 of the n-type semiconductor layer 10. In a planar view, the n-side electrode 50 is provided more outward than the p-side electrode 40 in the periphery of the p-side electrode 40.