发明名称 |
ABRASIVE FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, METHOD OF POLISHING THEREWITH AND PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
To provide a technique employed when a plane to be polished of a silicon dioxide type material layer is polished in production of a semiconductor integrated circuit device, which is capable of polishing protruded portions by priority while suppressing polishing at recessed portions and planarizing the plane to be polished at a high level with an extremely small polishing amount, with small pattern dependence of the polishing rate. In production of a semiconductor integrated circuit device, when a plane to be polished is a plane to be polished of a silicon dioxide type material layer, a polishing compound containing cerium oxide particles, a water-soluble polyamine and water is used as a polishing compound for chemical mechanical polishing to polish the plane to be polished.
|
申请公布号 |
EP1865546(A1) |
申请公布日期 |
2007.12.12 |
申请号 |
EP20060714785 |
申请日期 |
2006.02.27 |
申请人 |
ASAHI GLASS COMPANY, LIMITED;AGC SEIMI CHEMICAL CO., LTD. |
发明人 |
YOSHIDA, IORI;KON, YOSHINORI |
分类号 |
H01L21/304;B24B37/00;C09G1/02;C09K3/14;H01L21/321 |
主分类号 |
H01L21/304 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|