| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor sensor capable of accurately identifying a specimen, and an identification method using it. <P>SOLUTION: A double-gate type thin film transistor 3 is provided on an insulating substrate 2. The bottom-gate electrode 4 of the double-gate type thin film transistor 3 is formed on the insulating substrate 2, a lower insulating film 5 is formed on the bottom-gate electrode 4, a semiconductor layer 6 is formed on the lower insulating film 5, impurity semiconductor layers 7 and 8 are formed on both sides of the semiconductor layer 6, a source electrode 11 and a drain electrode 12 are formed on the impurity semiconductor layers 7 and 8, an upper insulating layer 9 is formed on the central part of the upper surface of the semiconductor layer 6, a top gate electrode 10 is formed on the central part of the upper surface of the upper insulating layer 9 and the first probe electrode 41 formed on the insulating substrate 2 is connected to the bottom-gate electrode 4. A second probe electrode 42 is opposed to the first probe electrode 41 and the specimen 99 is charged in the gap between the first and second probe electrodes 41 and 42. <P>COPYRIGHT: (C)2008,JPO&INPIT |
