| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing apparatus and a method of manufacturing the group III nitride semiconductor for solving a fault of conventional HVPE equipment. SOLUTION: In a manufacturing apparatus 1 of a group III nitride semiconductor, group III gas g3 and group V gas g5 used as raw material are supplied to the inside of a growth furnace 3, and the growing group III nitride semiconductor crystal C is grown on a substrate 2 by the gases g3 and g5. The growth furnace 3 has at least two chambers, such as an A chamber 5a, to which the group III gas g3 mutually separated by a barrier wall 4 is fed, and a B chamber 5b, to which the group V gas g5 is fed. Both the gas outlet openings 7, 9 of the A room 5a and the B room 5b are put near to each other, and a substrate 2 is arranged in the vicinity of these gas outlet openings 7, 9. COPYRIGHT: (C)2008,JPO&INPIT
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