| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic FET equipped with an organic semiconductor layer having transistor characteristics which are improved by raising a carrier movement property of the organic semiconductor layer touching a gate insulating film. SOLUTION: In an organic field-effect transistor equipped with at least the organic semiconductor layer, a source electrode, a drain electrode and a gate electrode, wherein the source electrode and the drain electrode touch the organic semiconductor layer, respectively, it is characterized in that the organic semiconductor layer contains a semiconductor nature compound whose molecular weight is 1,000 or less and at least one or more conductive compounds with larger molecular weight than that of the semiconductor nature compound. COPYRIGHT: (C)2008,JPO&INPIT
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