| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a contact plug having a stable contact resistance. SOLUTION: The contact plug is connected with a diffusion layer formed on the surface of a silicon substrate 11. An Ni silicide film 13 formed on the diffusion layer is thicker in its part (13a) connected with the contact plug. After forming a contact hole 15 in an interlayer insulating film 14 formed on the silicon substrate 11, an Ni film 16 is formed so that it may cover the sides and the bottom of the contact hole 15. After that, the thickness of the Ni silicide film 13 is increased through self-alignment in the portion where the contact hole 15 is formed by turning the Ni film 16 into silicide. COPYRIGHT: (C)2008,JPO&INPIT
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