| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser annealing technique that can highly crystallize the entire surface of an amorphous semiconductor film, hardly has granular crystal sections on nearly the entire surface of the amorphous semiconductor film, and can form a lateral crystal film without any joints, to provide a semiconductor film that has high crystallinity and is ideal as an active layer, or the like of a thin-film transistor (TFT) by using the technique, and to provide a semiconductor device, such as the TFT using the semiconductor film, and an electrooptical device. SOLUTION: Laser annealing is executed under conditions where a granular crystal part and an amorphous part are melted and a lateral crystal part is not melted. Further, laser annealing is executed by changing laser beam irradiation conditions in the granular crystal part from those in the amorphous part so that ¾EA-EP¾<¾EA-EPs¾... (1) is met, where EA is absorption light energy per unit area of laser beams at the amorphous part, EPs is absorption light energy per unit area of laser beams at the granular crystal part when laser beams are applied under the same laser beam irradiation conditions as those for the amorphous part, and EP is actual absorption light energy per unit area of laser beams at the granular crystal part. COPYRIGHT: (C)2008,JPO&INPIT
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