| 发明名称 |
PFET GATE STACK MATERIALS HAVING IMPROVED THRESHOLD VOLTAGE, MOBILITY AND NBTI PERFORMANCE |
| 摘要 |
A method of forming a transistor device includes forming an interfacial layer and a dielectric layer over a substrate; and forming a p-type field effect transistor (PFET) workfunction metal layer over the dielectric layer, the workfunction metal layer comprising a lower titanium nitride (TiN) first layer and a second layer including one of titanium-aluminum-carbide (TiAlC) and tantalum-aluminum-carbide (TaAlC) formed on the lower TiN first layer. |
| 申请公布号 |
US2016163603(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201414562991 |
申请日期 |
2014.12.08 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Bao Ruqiang;Krishnan Siddarth;Kwon Unoh;Wong Keith Kwong Hon |
| 分类号 |
H01L21/8238;H01L29/49;H01L21/28 |
主分类号 |
H01L21/8238 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a transistor device, the method comprising:
forming an interfacial layer and a dielectric layer over a substrate; and forming a p-type field effect transistor (PFET) workfunction metal layer over the dielectric layer, the workfunction metal layer comprising a lower titanium nitride (TiN) first layer and a second layer comprising one of titanium-aluminum-carbide (TiAlC) and tantalum-aluminum-carbide (TaAlC) formed on the lower TiN first layer. |
| 地址 |
Armonk NY US |
